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MRF8S21172HR3 mrf8s21172hsr3 1 rf device data freescale semiconductor rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for w--cdma and lte base station applications with frequencies from 2110 to 2170 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1350 ma, p out = 42 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 2110 mhz 17.3 32.6 5.9 --35.8 2140 mhz 17.4 32.0 6.0 --35.9 2170 mhz 17.5 31.6 5.9 --35.0 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 193 watts cw output power (3 db input overdrive from rated p out ) ? typical p out @ 1 db compression point ? 132 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? rohs compliant ? in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 13. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c cw operation @ t c =25 c derate above 25 c cw 196 0.98 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 71 c, 42 w cw, 28 vdc, i dq = 1350 ma, 2170 mhz case temperature 84 c, 160 w cw (4) ,28vdc,i dq = 1350 ma, 2170 mhz r jc 0.41 0.41 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. exceeds recommended operating conditions. see cw operation data in maximum ratings table. document number: mrf8s21172h rev. 0, 3/2011 freescale semiconductor technical data 2110--2170 mhz, 42 w avg., 28 v w--cdma, lte lateral n--channel rf power mosfets MRF8S21172HR3 mrf8s21172hsr3 case 465a--06, style 1 ni--780s mrf8s21172hsr3 case 465--06, style 1 ni--780 MRF8S21172HR3 ? freescale semiconductor, inc., 2011. a ll rights reserved.
2 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds =10vdc,i d = 258 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i d = 1350 madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (1) (v dd =28vdc,i d = 1350 madc, measured in functional test) v gg(q) 4.5 5.4 6.0 vdc drain--source on--voltage (v gs =10vdc,i d =2.5adc) v ds(on) 0.1 0.24 0.3 vdc functional tests (2) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1350 ma, p out = 42 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 16.5 17.5 19.5 db drain efficiency d 30.4 31.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.6 5.9 ? db adjacent channel power ratio acpr ? --35.0 --33.2 dbc input return loss irl ? -- 1 3 -- 8 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1350 ma, p out =42wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 17.3 32.6 5.9 --35.8 -- 1 4 2140 mhz 17.4 32.0 6.0 --35.9 -- 1 4 2170 mhz 17.5 31.6 5.9 --35.0 -- 1 3 1. v gg =2xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output. (continued)
MRF8S21172HR3 mrf8s21172hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1350 ma, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 132 ? w imd symmetry @ 104 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 20 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 58 ? mhz gain flatness in 60 mhz bandwidth @ p out =42wavg. g f ? 0.25 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.017 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.003 ? db/ c
4 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3 figure 1. MRF8S21172HR3(hsr3) test circuit component layout mrf8s21172 rev. 0 r1 c9 c8 c4 c5 c31 r3 c1 c30 c29 c3 r4 c32 c28 c3 c2 c6 c7 c14 c15 c17 c23 c25 c22 c26 c27 c19 c18 c13 c12 c21 c20 c24 c10 c11 c16 r2 table 5. MRF8S21172HR3(hsr3) test circuit component designations and values part description part number manufacturer c1, c5, c7, c11, c15, c16, c17, c26, c27 68 pf chip capacitors atc800b680jt500xt atc c2 1.3 pf chip capacitor atc800b1r3bt500xt atc c3 1.5 pf chip capacitor atc800b1r5bt500xt atc c4, c6, c10, c12, c13, c14 0.8 pf chip capacitors atc800b0r8bt500xt atc c8, c9, c20, c21, c22, c23 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c18, c19 1.1 pf chip capacitors atc800b1r1bt500xt atc c24, c25 330 f, 63 v electrolytic capacitors mcrh63v337m13x21--rh multicomp c28, c29 0.9 pf chip capacitors atc800b0r9bt500xt atc c30 0.6 pf chip capacitor atc800b0r6bt500xt atc c31, c32 0.5 pf chip capacitors atc800b0r5bt500xt atc r1, r2 2k ? , 1/4 w chip resistors crcw12062k00fkea vishay r3, r4 2.37 ? , 1/4 w chip resistors crcw12062r37fnea vishay pcb 0.030 , r =3.55 rf--35a2 taconic
MRF8S21172HR3 mrf8s21172hsr3 5 rf device data freescale semiconductor typical characteristics irl, input return loss (db) 2060 irl g ps acpr f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 42 watts avg. -- 1 4 -- 1 0 -- 11 -- 1 2 -- 1 3 17 18 17.9 17.8 -- 3 6 35 34 33 32 -- 3 1 -- 3 2 -- 3 3 -- 3 4 d , drain efficiency (%) d 17.7 17.6 17.5 17.4 17.3 17.2 17.1 2080 2100 2120 2140 2160 2180 2200 2220 31 -- 3 5 -- 1 5 parc parc (db) -- 2 . 2 -- 1 . 4 -- 1 . 6 -- 1 . 8 -- 2 -- 2 . 4 acpr (dbc) v dd =28vdc,p out =42w(avg.),i dq = 1350 ma single--carrier w--cdma, 3.84 mhz channel bandwidth figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 104 w (pep), i dq = 1350 ma two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 30 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 20 40 50 70 20 44 40 36 32 28 24 d , drain efficiency (%) -- 1 d b = 3 5 w -- 2 d b = 4 9 w -- 3 d b = 6 5 w 60 v dd =28vdc,i dq = 1350 ma, f = 2140 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth d acpr parc acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 18.5 g ps , power gain (db) 18 17.5 17 16.5 16 15.5 g ps input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf input signal par = 7.5 d b @ 0.01% pr obabilit y on ccdf g ps , power gain (db)
6 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3 typical characteristics 1 acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 -- 2 0 10 22 0 60 50 40 30 20 d , drain efficiency (%) g ps , power gain (db) 20 18 10 100 200 10 -- 6 0 acpr (dbc) 16 14 12 0 -- 3 0 -- 4 0 -- 5 0 figure 6. broadband frequency response 0 24 1700 f, frequency (mhz) 16 12 8 1800 gain (db) 20 gain 1900 2000 2100 2200 2300 2400 2500 irl -- 1 8 0 -- 3 -- 6 -- 9 -- 1 2 irl (db) 4--15 2170 mhz 2140 mhz 2110 mhz 2110 mhz 2140 mhz 2170 mhz d v dd =28vdc p in =0dbm i dq = 1350 ma 2140 mhz 2170 mhz 2110 mhz g ps v dd =28vdc,i dq = 1350 ma, single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pr obabilit y on ccdf w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
MRF8S21172HR3 mrf8s21172hsr3 7 rf device data freescale semiconductor v dd =28vdc,i dq = 1350 ma , p out =42wavg. f mhz z source ? z load ? 2060 7.06 -- j2.80 0.74 -- j2.83 2080 6.94 -- j2.81 0.84 -- j3.41 2100 6.79 -- j2.83 0.96 -- j4.04 2120 6.65 -- j2.84 1.08 -- j4.72 2140 6.50 -- j2.84 1.23 -- j5.42 2160 6.35 -- j2.86 1.44 -- j6.17 2180 6.19 -- j2.88 1.73 -- j6.99 2200 6.02 -- j2.90 2.13 -- j7.91 2220 5.84 -- j2.92 2.66 -- j8.95 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3 alternative peak tune load pull characteristics v dd =28vdc,i dq = 1350 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 2110 5.81 -- j7.39 1.52 -- j3.75 52.9 195 50.3 53.7 234 50.9 2140 7.36 -- j5.98 1.60 -- j3.97 52.8 191 49.0 53.7 234 50.7 2170 9.91 -- j3.25 1.43 -- j4.22 52.8 191 49.1 53.7 234 51.1 (1) load impedance for optimum p1db power. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 10. load pull performance ? maximum p1db tuning z source z load input load pull tuner device under test output load pull tuner v dd =28vdc,i dq = 1350 ma , pulsed cw, 10 sec(on), 10% duty cycle f (mhz) z source ( ? ) z load (1) ( ? ) max drain efficiency p1db p3db (dbm) (w) d (%) (dbm) (w) d (%) 2110 5.81 -- j7.39 3.31 -- j2.75 51.4 138 57.9 52.1 162 60.6 2140 7.36 -- j5.98 3.06 -- j2.54 51.7 148 57.6 52.2 166 60.4 2170 9.91 -- j3.25 2.96 -- j2.98 51.8 151 57.0 52.4 174 60.4 (1) load impedance for optimum p1db efficiency. z source = impedance as measured from gate contact to ground. z load = impedance as measured from drain contact to ground. figure 11. load pull performance ? maximum efficiency tuning z source z load input load pull tuner device under test output load pull tuner
MRF8S21172HR3 mrf8s21172hsr3 9 rf device data freescale semiconductor package dimensions
10 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3
MRF8S21172HR3 mrf8s21172hsr3 11 rf device data freescale semiconductor
12 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3
MRF8S21172HR3 mrf8s21172hsr3 13 rf device data freescale semiconductor product documentation and software refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for mrf8s21172h and mrf8s21172hs parts will be available for 2 years after release of mrf8s21172h and mrf8s21172hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered mrf8s21172h and mrf8s21172hs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 mar. 2011 ? initial release of data sheet
14 rf device data freescale semiconductor MRF8S21172HR3 mrf8s21172hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf8s21172h rev. 0, 3/2011

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